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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2562 DESCRIPTION With TO-220 package Complement to type 2SA1012 Low saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER CHA IN Collector current Base current Collector-base voltage Collector-emitter voltage E SEM NG Open emitter OND IC CONDITIONS TOR UC VALUE 60 50 5 5 1 UNIT V V V A A W ae ae Open base Emitter-base voltage Open collector Total power dissipation Junction temperature Storage temperature TC=25ae 25 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA , IB=0 IC=3A; IB=0.15A IC=3A; IB=0.15A VCB=50V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=1V IC=3A ; VCE=1V IC=1A ; VCE=4V f=1MHz ; VCB=10V 70 30 MIN 50 TYP. 2SC2562 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE -1 hFE -2 fT Cob MAX UNIT V 0.4 1.2 1 1 240 |I |I V V A A Switching times ton ts tf Fall time CHA IN Turn-on time Storage time E SEM NG OND IC TOR UC 80 0.1 1.0 0.1 120 MHz pF |I |I |I s s s IC=3A ;IB1=- IB2=0.15A RL=10| ,VCC=30V hFE-1 Classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2562 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2562 CHA IN E SEM NG OND IC TOR UC 4 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2562 CHA IN E SEM NG OND IC TOR UC 5 |
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